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用自洽计算的方法研究了极化电场对Al_xGa_(1-x)N/GaN双量子阱中子带间跃迁的光学性质和电子分布的影响.发现极化场会导致电压降的出现,从而使得结构对称的Al_xGa_(1-x)N/GaN双量子阱具有不对称的导带和价带.极化效应还会使奇数序和偶数序的子带之间发生很大的Stark平移,从而使第一奇数序和第二偶数序子带之间的跃迁波长变短,这将有利于实现工作在通信窗口的光电子器件.同时,由于导带分布的不对称性,电子分布也不对称,从而会影响吸收系数.
The influence of polarized electric field on the optical properties and electron distribution of the transitions in the Al_xGa_ (1-x) N / GaN double quantum well is investigated by a self-consistent method. It is found that the polarization field causes the voltage drop to appear, Making the structure symmetrical Al_xGa_ (1-x) N / GaN double quantum well has an asymmetric conduction band and valence band.The polarization effect also causes a large Stark shift between odd and even sub-bands The shorter the transition wavelength between the first odd sequence and the second even sequence subband, which will be conducive to the realization of optoelectronic devices operating in the communication window.At the same time, due to the asymmetry of the conduction band distribution, the electron distribution is also asymmetric, Thus affecting the absorption coefficient.