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利用低压金属有机化学汽相淀积(MOCVD)设备在Ge衬底上生长GaAs外延层。通过改变GaAs过渡层的生长温度对GaAs外延层进行了表征,利用扫描电镜(SEM)和X射线衍射仪研究了表面形貌和晶体质量,优化出满足高效太阳能电池要求的高质量GaAs单晶层生长条件。
A GaAs epitaxial layer is grown on a Ge substrate using a low pressure metalorganic chemical vapor deposition (MOCVD) apparatus. The GaAs epitaxial layer was characterized by changing the growth temperature of GaAs transition layer. The surface morphology and crystal quality were studied by scanning electron microscope (SEM) and X-ray diffractometer. The high quality GaAs single crystal layer Growth conditions.