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Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitr
【机 构】
：
DepartmentofElectronicsScienceandTechnology,ShanghaiInstituteofMicrosystemandInformationTechnology
【出 处】
：
核技术：英文版
【发表日期】
：
2006年1期
【基金项目】
：
Supported by the Special Funds for Major State Basic Research Projects （No.G2000036506） and the National Natural Science Foundation of China（No. 60476006）
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