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研究了SIMOXSOI器件的电学特性 .发现在众多的MOSFET中 ,输出特性曲线的低漏压端都出现了“鸟嘴”形畸变 ,表现在转移特性曲线上便是高栅压区域中漏电流的深度饱和 .在经历沟道热载流子应力之后 ,这类器件的电学参数退化不同于一般器件的损伤特性 .研究发现NMOSFET在应力之后其漏电流的深度饱和得到恢复 ;而对于PMOS ,应力之后输出特性中的“鸟嘴”形畸变并没有消弱的迹象 .这些性质对于SOI器件可靠性设计和可靠性加固均是重要的 .
The electrical properties of SIMOXSOI devices have been investigated and found that in many MOSFETs, “bird-beak” distortion occurs at the low-leakage terminals of the output characteristic curve and the transfer characteristic curves show the depth of the leakage current in the high gate-voltage region Saturation. After experiencing channel hot carrier stress, the degradation of the electrical parameters of these devices is different from the damage characteristics of general devices. The study found that the depth of saturation of the leakage current of NMOSFET recovered after stress; The “beak” distortion in the features does not show any sign of attenuation, and these properties are important for reliability design and reliability enhancement of SOI devices.