InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of ap proximately 20Onm and a height of 70Onto are fabricated by inductively coupled plasma etching using Ni selfassembled nanodots as etching mask. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved after the fabrication of nanopillars, and a blue shift and a decrease of full width at half maximum of the PL peak axe observed. The method of additional wet etching with different chemical solutions is used to remove the etch-induced damage. The result shows that the dilute HCI (HCI:H2O=1:l) treatment is the most effective. The PL intensity of nanopillar LEDs after such a treatment is about 3.5 times stronger than that before treatment.