论文部分内容阅读
激光区熔再结晶制作的ＳＯＩ结构中杂质分布和迁移率分布研究＝［刊，俄］／－１９９３．２２（１）．－３～１３绝缘物上硅（ＳＯＩ）工艺，是微电子学最有发展前途的制作技术，特别是制作具有高速、高可靠性和高抗辐射加固性能的高集成度ＣＭＯＳ集成电路尤为适用。为了...
Study on impurity distribution and mobility distribution in SOI structure fabricated by laser zone recrystallization = [Journal of Russian] / - 1993.22 (1). -3 ~ 13 silicon on insulator (SOI) process is the most promising microelectronics production technology, especially for the production of high-speed, high reliability and high radiation resistance of highly integrated CMOS integrated circuits is particularly applicable. in order to...