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我们设计研制了一个基于Al GaN/GaN HEMT大功率放大器的混合集成电路.这个电路包含了1个10×120μm的HEMT晶体管,以及输入和输出匹配电路.在偏置条件为Vds=40 V,Ids=0.26 A时,输出连续波饱和功率在5.4 GHz达到37 dBm(5 W),最大的PAE为35.6%.在偏置条件为Vds=30 V,Ids=0.22 A时输出连续波饱和功率在5.4 GHz达到36.4dBm(4.4 W),最大的PAE为42.7%.
We designed and fabricated a hybrid IC based on a high-power AlGaN / GaN HEMT power amplifier. This circuit includes a 10 × 120μm HEMT transistor, as well as input and output matching circuits. Under bias conditions of Vds = 40 V, Ids = 0.26 A, the output continuous wave saturation power reaches 37 dBm (5 W) at 5.4 GHz and the maximum PAE is 35.6%. The output continuous wave saturation power is 5.4 at the bias conditions of Vds = 30 V, Ids = 0.22 A GHz achieves 36.4dBm (4.4 W) and the maximum PAE is 42.7%.