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N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs’ density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.
N-type Si (111) wafers have been processed by high-current pulsed electron beam (HCPEB) treatment with an increasing number of irradiation (1, 10 and 20 photos). The results of this work show that a highly porous nanostructure was formed after The high-density Si nanocrystals (Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited 3.02 e V Photoluminescence (PL) emission in blue band. PL PL increases with the increase in the Si-ncs’ density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.