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探测波长达到2μm或超过2μm的光探测器在光学传感方面具有广泛应用.由于目前基于InGaAs的探测器所具有的大暗电流,这使其不适用于强电场器件,如雪崩光电二极管(APDs).Princeton大学的研究人员开发了一种新技术,使APDs的理论探测能力达到2.1μm.在磷酸铟衬底上能够制备具有高含钢量的材料,但却被挤压变形,这导致生长出许多变形的量子阱,因而降低了量子效率.研究小组用另一个层(与其形变相同但方向相反)来补偿这种挤压形变,由此制造的
Detectors with a wavelength of 2 μm or more are widely used in optical sensing due to the large dark current present in InGaAs-based detectors, making them unsuitable for applications with strong electric fields such as avalanche photodiodes (APDs) ). Researchers at Princeton University have developed a new technique that enables APDs to theoretically detect at 2.1 μm. Materials with a high content of steel can be made on indium-phosphate substrates but are squeezed and deformed, resulting in the growth of many Deformation quantum wells, thus reducing the quantum efficiency.Research team with another layer (with the same deformation but in the opposite direction) to compensate for this extrusion deformation, thus produced