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不同温度下利用钛宝石激光器输出的飞秒激光脉冲(脉宽42fs,中心波长800nm,最大单脉冲能量3.6mJ),通过扫描方式在硅表面诱导产生表面微结构。采用光学显微镜和扫描电镜观察飞秒激光诱导硅表面微结构的形貌,发现不同温度下硅片表面形成的微结构区域和形貌出现明显的差异。根据观测结果,分析比较了不同温度条件下硅材料微结构形成的能量阈值。随着温度升高,形成的微结构区域减小,飞秒激光诱导形成硅表面微结构的能量阈值升高。这对于研究飞秒激光与物质的相互作用有一定的参考价值,也能对将来实现硅表面微结构的制作提供参考。
The femtosecond laser pulses (pulse width 42fs, central wavelength 800nm, maximum single-pulse energy 3.6mJ) output by the Ti: sapphire laser at different temperatures were used to induce the surface microstructure on the silicon surface by scanning. The morphologies of the microstructures on the silicon surface induced by femtosecond laser were observed by optical microscope and scanning electron microscope. It was found that there were obvious differences in the microstructure and morphology of the silicon films formed under different temperatures. According to the observed results, the energy thresholds for the formation of microstructures of silicon material under different temperature conditions were analyzed and compared. As the temperature increases, the microstructure area decreases and the energy threshold of the femtosecond laser-induced formation of silicon surface microstructures increases. This is of certain reference value for studying the interaction between femtosecond laser and matter, and also can provide reference for the future realization of the microstructure of silicon surface.