采用PIN结构,研制出高阻p型硅大面积四象限探测器。详细介绍了器件结构设计和制作工艺。对器件响应时间、象限串扰、暗电流和响应度等参数进行了计算与分析。实验结果表明,器件响应度达到0.45A/W(λ=1.06μm),暗电流小于50nA(Vr=135V),象限间串扰低于2.5%。 PIN structure, developed a high-resistance p-type silicon four-quadrant detector. Details of the device structure design and manufacturing process. The parameters of device response time, quadrant crosstalk, dark current and responsivity were calculated and analyzed. The experimental results show that the responsivity of the device reaches 0.45A / W (λ = 1.06μm), the dark current is less than 50nA (Vr = 135V) and the quadrant crosstalk is less than 2.5%.