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通过对不同晶系线性电光系数矩阵的分析计算,研究了利用晶体电光系数γ51实现电光调制的可能性.结果分析表明,在电场中的γ51引起折射率的变化与x方向电场强度E12成正比;利用KTa0.35Nb0.65O3晶体的巨大γ51参数引起的二次电光效应,可以获得较低的半波电压;在立方-四方相变点附近的KTa1-xNbxO3晶体有极大克尔系数的现象,同时γ51参数电光效应也得到了解释.
The possibility of electro-optic modulation using crystal electro-optic coefficient γ51 was studied by analyzing and calculating the linear electro-optic coefficient matrix of different crystal systems.Results show that the change of refractive index in the electric field is proportional to the electric field intensity in the x direction E12. The second half-wave voltage can be obtained by using the second-order electro-optic effect caused by the large γ51 parameter of KTa0.35Nb0.65O3 crystal. The KTa1-xNbxO3 crystal near the cubic-tetragonal phase has a large Kerr coefficient, meanwhile, The electro-optic effect of the γ51 parameter has also been explained.