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据《NEC技报》2005年第3期报道,该公司开发了用于手机基站的大功率、小型、高效的单芯片GaN晶体管。目前,用于基站的晶体管大都为Si或GaAs晶体管,为了获得240-300 W 的饱和输出功率,通常采用3-4个晶体管芯片进行功率合成。这次开发的单芯片功率管的特性大致如下: ①在热导优异的SiC衬底上形成高品质的GaN和AlGaN的异质结;②形成高电压、大电流工作的场调制板(FP)电极结构;⑧采用可降低栅漏电流1/50 的埋入电极结构。
According to the NEC Magazine No. 3, 2005, the company has developed a high-power, compact, and efficient single-chip GaN transistor for cell phone base stations. At present, most of the transistors used for the base station are Si or GaAs transistors. In order to obtain a saturated output power of 240-300 W, 3-4 transistor chips are usually used for power synthesis. The characteristics of the single-chip power transistor developed this time are as follows: ① High quality GaN and AlGaN heterojunction formed on a SiC substrate with excellent thermal conductivity; ② Field modulation plate (FP) for high voltage and high current operation, Electrode structure; ⑧ buried gate electrode structure can reduce the gate leakage current 1/50.