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以Al2 O3 为衬底 ,采用金属有机汽相沉积 (MOCVD)技术在GaN膜上生长了InxGa1 -xN薄膜。以卢瑟福背散射 沟道技术和光致发光技术对InxGa1 -xN GaN Al2 O3 样品进行了分析。研究表明 ,金属有机汽相沉积生长高In组分InxGa1 -xN薄膜有一最佳TMIn TEGa摩尔流量比。在一定范围内 ,降低其摩尔流量比 ,合金的生长速率增高 ,In组分提高 ;进一步降低TMIn TEGa摩尔流量比 ,导致In组分下降。研究还表明 ,InGaN薄膜的结晶品质随In组分的增大而下降 ,InGaN薄膜的In组分由 0 0 4增大到 0 10 ,其最低沟道产额比由 4 1%增至 11 0 %。
The InxGa1-xN thin films were grown on GaN films by metal organic vapor deposition (MOCVD) using Al2 O3 as substrate. InxGa1-xN GaN Al2 O3 samples were analyzed by Rutherford backscattering trench technology and photoluminescence technology. Studies have shown that metal-organic vapor deposition growth of high In In InGaN-xN thin film has a best TMIn TEGa molar flow ratio. In a certain range, the molar flow ratio decreased, the alloy growth rate increased, In composition increased; to further reduce TMIn TEGa molar flow ratio, resulting in decreased In composition. The results also show that the crystal quality of InGaN thin films decreases with the increase of In composition, the In composition of InGaN thin films increases from 0 0 4 to 0 10, and the lowest channel yield increases from 41 1% to 11 0 %.