论文部分内容阅读
,Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFE
【机 构】
：
Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Devices, School of Microelectronics
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2010年12期
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