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微电子机械系统(MEMS)器件加工中,采用表面Si工艺和体Si工艺的混合工艺或MEMS SOI工艺,用SiO2的湿法腐蚀液缓冲氢氟酸(BOE)释放MEMS Si结构时将会出现一个新问题,阐述了该新问题的工作机理并给出可行的解决方法。以100 mm(4英寸)p型双面抛光Si片(100)替代MEMS器件Si结构,详细阐述了经过不同方法处理的Si片表面在不同温度下的BOE溶液以及加有表面活性剂的BOE溶液中是否产生气泡,并通过测量BOE溶液与Si片表面的接触角大小来衡量表面活性剂的效果。文章指出BOE溶液的温度、Si片表面的粗糙度以及表面活性剂的类型对气泡的产生具有很大的影响,同时指出阴性表面活性剂为抑制气泡产生的最佳表面活性剂。
In microelectromechanical systems (MEMS) devices, a surface-Si process and a bulk Si process hybrid process or a MEMS SOI process is used. A SiO 2 wet-process buffer buffered hydrofluoric acid (BOE) New problems, expounds the working mechanism of the new problems and gives a feasible solution. A 100 mm (4 inch) p-type double-sided polished Si wafer (100) was used to replace the Si structure of the MEMS device. The BOE solution and the BOE solution with different surfactants were processed in detail. In the presence of bubbles, and measure the effect of the surfactant by measuring the contact angle between the BOE solution and the Si wafer surface. The paper points out that the temperature of BOE solution, the surface roughness of Si wafer and the type of surfactant have a great influence on bubble generation. Meanwhile, it is pointed out that the negative surfactant is the best surfactant to suppress bubble generation.