Molecular dynamics(MD) simulations were performed to investigate F+ continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K.The simulated results show that the steady-state uptake of F atoms increases with increasing incident angle.With the steady-state etching established,a Si-C-F reactive layer is formed.It is found that the etching yield of Si is greater than that of C.In the F-containing reaction layer,the SiF species is dominant with incident angles less than 30o.For all incident angles,the CF species is dominant over CF2 and CF3. Molecular dynamics (MD) simulations were performed to investigate F + continuously bombarding SiC surfaces with energies of 100 eV at different incident angles at 300 K. The simulated results show that steady-state uptake of F atoms increases with increasing incident angle .With the steady It is found that the etching yield of Si is greater than that of C. In the F-containing reaction layer, the SiF species is dominant with incident angles of less than 30 °. For all incident angles, the CF species is dominant over CF2 and CF3.