论文部分内容阅读
采用高压射频等离子体增强化学气相沉积(RF-PECVD)方法制备本征硅薄膜和n-i-p结构太阳电池,研究了氢稀释率对本征硅薄膜的电学特性和结构特性的影响.采用光发射谱(OES)和喇曼(Raman)散射光谱研究了处于过渡区的本征硅薄膜的纵向结构演变过程.结果表明:光发射谱和喇曼散射光谱可以作为研究硅薄膜的纵向结构演变有效手段.随着氢稀释率的增加,硅薄膜从非晶相向微晶相过渡时,其纵向结构的改变会严重影响硅薄膜太阳电池的光伏性能.
The intrinsic silicon thin films and nip structured solar cells were prepared by high-pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method, and the influence of hydrogen dilution rate on the electrical and structural properties of intrinsic silicon thin films was studied. ) And Raman scattering spectra were used to study the evolution of the longitudinal structure of the intrinsic silicon thin films in the transition region.The results show that the optical emission spectra and Raman scattering spectra can be used as effective means to study the longitudinal structure evolution of silicon thin films Hydrogen dilution rate increases, the silicon film from the amorphous phase to the microcrystalline phase transition, the longitudinal structure of the changes will seriously affect the silicon thin film solar photovoltaic properties.