由于高亮度蓝光和绿光 LED 已在很大程度上实现了商用化,因此目前人们对 GaN 及其合金的兴趣显然不仅仅只是好奇而已。然而仍有许多诸如 p 型掺杂、金属化及电流传导等问题还有待解决。本文将讨论掺 Mg GaN 的发射特性,描述高电导率 GaN 的复合动力学与电导,以及用于 GaN 和 GaN/AlGaN 异质结构基 MODFET 整流和欧姆接触的金属化工艺等。 Since high-brightness blue and green LEDs have largely been commercialized, interest in GaN and its alloys is now clearly not just curious. However, many problems such as p-type doping, metallization and current conduction still remain to be solved. This article discusses the emission characteristics of Mg-doped Mg, describes the complex kinetics and conductance of GaN with high conductivity, and metallization processes for GaN and GaN / AlGaN heterostructure-based MODFET rectifiers and ohmic contacts.