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报道了在化学增速离子束腐蚀金属有机化学汽相淀积 GaN 的过程中使用 Ar 离子和 HCl 气体的情况。研究了腐蚀速率与离子束能量和衬底温度的关系。研究发现 HCl 气体与 Cl_2相比,在较低离子束能量(300eV)下腐蚀速率较高,在较高离子束能量(600eV)下腐蚀速率较低,实现了高度各向异性腐蚀分布。这表明这种工艺适合于制作激光器的端面和镜面。还利用 Auger 电子光谱法研究了腐蚀工艺引起的表面化学配比的变化。
Reported the use of Ar ions and HCl gas in chemical-accelerated ion beam etching of metal-organic-vapor-deposited GaN. The relationship between corrosion rate and ion beam energy and substrate temperature was studied. It is found that the HCl gas has a higher corrosion rate at lower ion beam energy (300 eV) than Cl 2 gas and a lower corrosion rate at higher ion beam energy (600 eV), thus achieving highly anisotropic corrosion distribution. This shows that this process is suitable for making laser end faces and mirrors. Auger electron spectroscopy was also used to study the corrosion process-induced changes in the surface stoichiometry.