论文部分内容阅读
64K动态存贮器用的基本工艺技术 。 光刻技术{凳娄袭蕞剂 ;篓茬竺耋磊等倍投影曝光 腐蚀技术 {湿法腐蚀一同时采用等离子千法腐蚀 元件间隔离技术 j选择氧化法 栅氧化技术 i干氧氧化法栅电极技术扩散层形成技术层间绝缘膜形成技术金属布线材料单层多晶硅一双层多晶硅热扩散法一
64K dynamic memory with the basic process technology. Photolithography {stalk Lou attack agent; basket stubble Zhu Lei Lei times projection exposure etching technique {wet etching at the same time using a plasma method of corrosion between the components of the separation technology j selective oxidation method gate oxide technology i dry oxide oxidation gate electrode technology diffusion Layer Forming Technology Interlayer Insulating Film Forming Technology Metal Wiring Materials Monolayer Polycrystalline Si-Bilayer Polycrystalline Si Thermal Diffusion Method I