采用甚高频等离子增强化学气相沉积(VHF-PECVD)的方法制备了硅烷浓度分别为6%和7%,随激发频率变化(40—70MHz)的氢化微晶硅(μc-Si∶H)薄膜材料.研究了材料的电学特性、结构特性、沉积速率与激发频率之间的关系.结果发现材料的光敏性随频率的增加先降低后提高,晶化率和沉积速率的变化趋势与之相反;在晶化率最高点,材料在(220)的晶向衍射峰最高.并从光发射谱的角度研究了材料结构和沉积速率随频率变化的原因. Hydrogenated microcrystalline silicon (μc-Si: H) films with 6% and 7% silane concentration (40-70 MHz) were prepared by VHF-PECVD The relationship between the electrical properties, the structural properties, the deposition rate and the excitation frequency were studied.The results showed that the photosensitivity of the material decreased first and then increased with the increase of the frequency, and the change tendency of the crystallization rate and the deposition rate was the opposite. At the highest crystallization rate, the diffraction peak of the material in (220) is the highest, and the reason of the change of the material structure and the deposition rate with frequency is studied from the light emission spectrum.