Halide perovskite single crystals (HPSCs) provide a unique platform to study the optoelectronic proper-ties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption,resulting in a soaring or slumping crystal growth rate of HPSCs.Here,we developed a universal and facile solvent-vola tilization-limited-growth (SVG) strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes.The grown HPSCs by SVG method exhibited a record low trap density of 2.8 × 108 cm-3 and a high charge carrier mobility-lifetime product (μτ pro-duct) of 0.021 cm2/V,indicating the excellent crystal quality.The crystal surface defects were further pas-sivated by oxygen suppliers as Lewis base,which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection.Such HPSC X-ray detector displayed a high sensitivity of 1274 μC/(Gyair cm2) with a lowest detectable dose rate of 0.56 μGyair/S under 120 keV hard X-ray.Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated,which not only shows the bright future for product quality inspection and non-destructive materials analysis,but also paves the way for growing high quality single crystals and fabricating polycrystalline films.