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H_(FE)参数是表征晶体管性能的重要参数之一,在生产厂中,一般以此参数的大小来分类,在产品质量管理中也往往按 H_(FE)参数来检验。手工测试方法不仅设备多,而且速度慢、精度差,更不能对参数进行自动记录及数据处理。为了改善测试设备,我们试制了多终端晶体管 H_(FE)参数测试仪,它以 Z80单板机为核心来完成参数测试控制及数值计算,并实现了多终端。一、测试原理及技术指标测试 H_(FE)参数首先得规定测试条件,即恒定的集电极电流 I′_c 和集电极电压 V′_(cE),对应 I′_c 和 V′_(cE)必有一个固定的基极电流 I′_(?) ,晶体管直流参数 H_(FE)=I′_c/
The H_ (FE) parameter is one of the most important parameters to characterize the performance of a transistor. Generally, the H_ (FE) parameter is classified according to the size of the parameter in the manufacturing plant, and is often tested according to the H_ (FE) parameter in product quality management. Manual testing methods not only equipment, and slow, poor accuracy, but also can not automatically record the parameters and data processing. In order to improve the test equipment, we prototype H_ (FE) multi-terminal transistor tester, which takes the Z80 single-chip microcomputer as the core to complete the parameter test control and numerical calculation, and realizes multi-terminal. First, the test principle and technical indicators Test H_ (FE) parameters must first specify the test conditions, the constant collector current I’_c and collector voltage V ’_ (cE), corresponding to I’_c and V’ _ (cE) Must have a fixed base current I ’_ (?), The transistor DC parameters H_ (FE) = I’_c /