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干法刻蚀现已成为微小高深宽比结构加工与微细图形制作的重要手段。提出了一种新的干法刻蚀技术—多层等离子体蚀刻,充分利用腔体的空间布局,布置多层电极,并采用分层送气装置输送放电气体,实现多层同时进行刻蚀,可成倍提高产能。采用该技术刻蚀光阻为例,从空间与时间两个角度分析了工艺参数对刻蚀速率与均匀性的影响规律与作用机理。实验结果表明,极板间距为50/55/60mm(由下向上),工作压力为40 Pa,R[O2:Ar]为1/2,RF功率为600W时,整炉次刻蚀速率均值为14.395 nm/min,均匀性为9.8%,此时工艺最为合理。
Dry etching has now become an important tool for the fabrication of very small, high aspect ratio structures and for fine patterning. A new dry etching technique, multi-layer plasma etching, is put forward to make full use of the spatial layout of the cavities. Multi-layer electrodes are arranged. The layered gas supply device is used to deliver the discharge gas to achieve simultaneous multi-layer etching. Doubled productivity. Using this technique to etch photoresist as an example, the influence rule and mechanism of process parameters on etch rate and uniformity are analyzed from two aspects of space and time. The experimental results show that the average etching rate of the entire furnace is 50/55/60 mm (from bottom to top), working pressure is 40 Pa, R [O2: Ar] is 1/2 and RF power is 600W 14.395 nm / min, the uniformity of 9.8%, this time the most reasonable process.