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利用微波等离子体化学气相沉积法,在天然金刚石的(100)、(110)以及(111)晶面上进行了同质外延生长单晶金刚石的研究,分析了这三个晶面上同质外延生长的特点。结果表明,不同的晶面上金刚石的生长速率和形貌显著不同。(110)晶面生长速率最快,表面由一系列大小不同的四面体组成,(100)晶面次之,呈现出排列规整的生长台阶,而(111)晶面生长速率最低,表面光滑平整,(100)和(111)的这种二维生长表面粗糙度明显小于(110)的一维生长表面,而这些特点与其生长模式密切相关。虽然在(111)晶面生长出了质量理想、表面平整的单晶金刚石,但是与(100)和(110)晶面外延生长的单晶金刚石相比,其质量还是较低。
The homoepitaxial growth of single crystal diamond on (100), (110) and (111) planes of natural diamond was studied by microwave plasma chemical vapor deposition. The homoepitaxial epitaxial growth The characteristics of growth. The results show that the growth rate and morphology of diamond on different crystal planes are significantly different. (110) crystal plane has the fastest growth rate. The surface consists of a series of tetrahedrons with different sizes. The (100) crystal plane followed by a regular growth step, while the (111) crystal plane has the lowest growth rate and the surface is smooth , (100) and (111) of this two-dimensional growth surface roughness is significantly less than (110) one-dimensional growth surface, and these characteristics are closely related with its growth pattern. Although monocrystalline diamond of good quality and surface roughness is grown on the (111) plane, its quality is still lower than the single crystal diamond epitaxially grown on (100) and (110) planes.