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在X2CO3–MoO3(X=Li,K)助熔剂体系下,采用顶部籽晶缓冷法生长出厘米级磷酸三镓(Ga3PO7)晶体。实验结果表明:X2CO3–MoO3助熔剂适合Ga3PO7单晶的生长。通过测量Ga3PO7单晶的紫外–近红外光谱和中红外光谱研究了其基本光学性能。在K2CO3–MoO3助熔剂体系下,生长的Ga3PO7晶体(101)晶面的透过率达到89%。热学性能测试表明:Ga3PO7晶体具有高的温度稳定性(在K2CO3–MoO3助熔剂体系下高达1 621.15 K),Ga3PO7晶体的导热性良好,且各向异性不明显,有利于其应用。从Li2CO3–MoO3和K2CO3–MoO3两种助熔剂体系中生长的Ga3PO7晶体,其基本性能无明显区别。
In the system of X2CO3-MoO3 (X = Li, K) flux, centimeter-grade gallium phosphate (Ga3PO7) crystals were grown by top-seed annealing. The experimental results show that X2CO3-MoO3 flux is suitable for the growth of Ga3PO7 single crystals. The basic optical properties of Ga3PO7 single crystal were studied by UV-NIR spectroscopy and mid-infrared spectroscopy. In K2CO3-MoO3 flux system, the growth of Ga3PO7 crystal (101) crystal plane transmittance of 89%. Thermal properties tests show that Ga3PO7 crystal has high temperature stability (up to 1621.15 K in K2CO3-MoO3 flux system). The thermal conductivity of Ga3PO7 crystal is good and its anisotropy is not obvious, which is beneficial to its application. From the Li2CO3-MoO3 and K2CO3-MoO3 two kinds of flux system growth Ga3PO7 crystals, the basic performance of no significant difference.