采用固相反应法合成具有焦绿石立方结构的Bi1.5ZnNb1.5O7(BZN)陶瓷靶材,采用脉冲激光沉积法在Pt/SiO2/Si(100)基片制备立方BZN薄膜。研究了随衬底温度的变化,薄膜的结晶性能,微观形貌以及介电性能的差异。结果表明当衬底温度在550~650℃时,薄膜具有纯的立方BZN结构,并且在600℃时薄膜的晶粒发育比较完整,此时薄膜具有较高的介电常数和较低的损耗。 A Bi1.5ZnNb1.5O7 (BZN) ceramic target with a pyrochlore cubic structure was synthesized by a solid-state reaction method. A cubic BZN thin film was prepared on a Pt / SiO2 / Si (100) substrate by pulsed laser deposition. The temperature dependence of the substrate, the crystallinity, microstructure and dielectric properties of the films were investigated. The results show that when the substrate temperature is 550 ~ 650 ℃, the film has a pure cubic BZN structure, and the grain growth of the film is relatively intact at 600 ℃. At this time, the film has higher dielectric constant and lower loss.