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本文从理论上和实验上对剪切应力对力敏电阻的压阻灵敏度影响进行了研究.在本文的分析中,取消了已往工作中对力敏电阻设计的取向限制,在计入剪切应力项作用的情况下,得到了(100)、(110),(111)圆硅膜和(100)方膜和长方膜上力敏电阻的压阻灵敏度表式.结果的解析形式及其曲线图示表明,在一般情况下,剪切应力项可以有很大的影响.为了证实这些分析的正确性,在长方形n型(100)硅膜上扩散制造了五个有不同取向角的电阻.这些电阻的压阻灵敏度对取向角关系的实验结果表明,剪切应力项的作用不可忽略.由于目前所见的关于压阻传感器的文献中都没有对剪切应力的作用足够重视,本工作的结果对力敏电阻设计提供了有用的资料.
In this paper, the influence of shear stress on piezoresistive sensitivity of force-sensitive resistor has been studied theoretically and experimentally.In the analysis of this paper, the orientation restriction on the design of force-sensitive resistor in previous work has been canceled, (100), (110), (111) circular silicon film and (100) square film and rectangular film on the pressure sensitive resistance piezoresistive sensitivity table.The results of the analytical form and its curve The graph shows that in general, the shear stress term can have a significant effect.In order to confirm the correctness of these analyzes, five different angles of orientation resistors were fabricated by diffusion over a rectangular n-type (100) silicon film. The experimental results of the piezoresistive sensitivity of these resistors on the orientation angle show that the effect of the shear stress term can not be neglected.Because none of the literature on piezoresistive sensors presently shows enough emphasis on the effect of shear stress, The results provide useful information on the design of the force-sensitive resistor.