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吸收边缘半抛物量子阱折射率的双峰结构的改变作为入射光强度的功能一直被研究,而且已经获得运用密度矩阵和迭代法所推导的关于折射率改变的公式.并呈现了在典型的AIGaAs/GaAs量子阱中所推导的数值结果.结构表明,入射光强度和半抛物量子阱的束缚频率是对折射率双峰结构的最大影响参数.
The change in the bimodal structure that absorbs the refractive index of the semi-parabolic quantum well on the fringe has been studied as the function of the incident light intensity, and the formula for the change of the refractive index derived by using the density matrix and the iteration has been obtained. In the case of the typical AIGaAs / GaAs quantum well.The structure shows that the incident light intensity and the bound frequency of the semi-parabolic quantum well are the most influential parameters on the bimodal refractive index structure.