尽管在砷化镓衬底上能否生长出令人满意的亚稳态立方相氮化镓仍受到工业界的怀疑,但国家光电技术研究中心和北京半导体所的研究人员已经使用这种方法制出蓝光输出发光二极管(LEDs).绝大多数现存的蓝光LEDs是基于最稳相的六方相GaN.尽管在自然界中不存在亚稳态立方相GaN,但可预言存在具有更高的载流子迁移率,更容易的P型掺杂和更窄能带隙的GaN.研究小组用金属有机化学汽相外延法在掺硅GaAs衬底上生长出了立方相GaN层状结构.一种对发光质量有益的亚微尺寸颗粒是从插入位错和层积缺陷中释放出来的.研究人员说这种结 Despite the industry’s suspicion of the ability to grow satisfactory metastable cubic gallium nitride on gallium arsenide substrates, researchers at the National Center for Optoelectronics Technology and Beijing Semiconductor have used this method Out of blue light emitting diodes (LEDs). Most of the existing blue LEDs are based on the most stable phase hexagonal GaN. Although metastable cubic GaN does not exist in nature, it is predictable that there are higher carriers Mobility, easier p-type doping, and narrower bandgap GaN.The team has grown a cubic GaN layered structure on a silicon-doped GaAs substrate by metalorganic chemical vapor-phase epitaxy Sub-micro-sized particles of good quality are released from insertion dislocations and delamination defects, the researchers say