设计了InGaN/GaN超晶格垒层替代p-GaN和n-GaN附近传统GaN垒层的InGaN/GaN多量子阱(MQW)发光二极管(LEDs)结构。通过数值方法模拟出两种LED结构的光功率-电压(L-V)曲线、电致发光(EL)谱、能带图、电子浓度分布和辐射复合速率。结果表明InGaN/GaN超晶格替代n-GaN附近GaN垒层的LED结构比替代p-GaN附近GaN垒层的LED显示出更高的发光强度。这种发光增强的原因是InGaN/GaN超晶格替代n-GaN附近GaN垒层可以提高电子注入效率和辐射复合速率。 InGaN / GaN multiple quantum well (MQW) light emitting diode (LED) structures designed with InGaN / GaN superlattices instead of p-GaN and conventional GaN layers near n-GaN were designed. The light power-voltage (L-V) curve, electroluminescence (EL) spectrum, energy band diagram, electron concentration distribution and radiation recombination rate were simulated numerically. The results show that the InGaN / GaN superlattice replaces the LED structure near the n-GaN GaN barrier layer with a higher luminescence intensity than the LED replacing the GaN barrier layer near the p-GaN layer. The reason for this increase in luminescence is that the substitution of InGaN / GaN superlattices for the GaN barrier layer near n-GaN can increase electron injection efficiency and radiation recombination rate.