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给出了槽栅 MOSFET的阈值电压解析模型 ,该模型反映了器件的阈值电压随不同结构和工艺参数变化的规律 .分析和对比结果显示 ,该模型较好地表征了小尺寸槽栅器件的阈值电压特性 ,是一个较为理想的解析模型
The threshold voltage analysis model of the trench gate MOSFET is given, which reflects the regularity of the threshold voltage of the device varying with different structures and process parameters.The analysis and comparison results show that this model better characterizes the threshold of the small-size trench gate device Voltage characteristics, is a more ideal analytical model