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我们的工作目的是为制造光电倍增管和其他光电元件提供一具有较高灵敏度的锑銫光电发射面。光电倍增管中的光电流是“背射”光电流(入射光与光电子逸出在光电阴极的二面)。对于“背射”光电流,实验确定,在其他条件相同时,存在一最佳之锑层厚度,相应于此锑层厚度的光电灵敏度最大。
The purpose of our work is to provide a higher sensitivity antimony cesium photoelectric emitter for the manufacture of photomultipliers and other optoelectronic components. The photocurrent in the photomultiplier tube is a “backscattered” photocurrent (incident light and photoelectrons escape on both sides of the photocathode). For the “backscattered” photocurrent, it is experimentally determined that there is an optimum thickness of antimony layer at the same other conditions, and the photoelectric sensitivity corresponding to the thickness of the antimony layer is the highest.