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将ＣｄＳ蒸镀于电致发光器件中，测量这些器件的电学和光学特性，发现ＣｄＳ层可以提供较多的电子但是，样品ＩＴＯ／ＳｉＯ／ＳｉＯ２／ＺｎＳ：Ｘ／ＣｄＳ／ＳｉＯ２／ＳｉＯ／Ａｌ（Ｘ＝Ｍｎ２＋，Ｓｍ３＋的亮度明显低于不含ＣｄＳ的样品，说明这些电子在向ＺｎＳ层输运的过程中能量有所降低在样品ＩＴＯ／ＳｉＯ／ＳｉＯ２／ＺｎＳ：Ｘ／ＳｉＯ２／ＣｄＳ／Ａｌ中，ＣｄＳ产生的电子经过ＳｉＯ加速而获得了较高的能量，提高了ＴＦＥＬ器件发光亮度这一样品的亮度比上述含ＣｄＳ的样品的亮度高２．５个数量级，且其阈值电压较低，亮度－电压特性好．在这一样品达到饱和的电压下，含ＣｄＳ的样品才刚刚起亮，这说明该样品的发光主要是ＣｄＳ提供的电子对发光的贡献。
CdS was deposited on the electroluminescent devices and the electrical and optical properties of these devices were measured. The CdS layer was found to provide more electrons. However, the samples were doped with ITO / SiO / SiO2 / ZnS: X / CdS / The brightness of X = Mn2 + and Sm3 + is significantly lower than that of CdS-free samples, indicating that the energy of these electrons decreases during transport to the ZnS layer. In the samples ITO / SiO / SiO2 / ZnS: X / SiO2 / CdS / Al , The electrons generated by CdS are accelerated by SiO to obtain higher energy, and the brightness of the sample which has improved the light emitting brightness of the TFEL device is 2.5 orders of magnitude higher than the brightness of the sample containing CdS, and the threshold voltage is lower. The brightness - Good voltage characteristics At the voltage at which this sample is saturated, the CdS-containing sample has just been on, indicating that the luminescence of this sample is mainly due to the contribution of CdS-provided electrons to luminescence.