论文部分内容阅读
用射频磁控溅射法在80℃衬底温度下制备出MgxZn1-xO(x=0·16)薄膜,用X射线衍射(XRD)、光致发光(PL)和透射谱研究了退火温度对MgxZn1-xO薄膜结构和光学性质的影响.测量结果显示,MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;随着退火温度的升高,(002)XRD峰强度、平均晶粒尺寸和紫外PL峰强度增大,(002)XRD峰半高宽(FWHM)减小.结果证明,用射频磁控溅射法通过适当控制退火温度可得到高质量MgxZn1-xO薄膜.
The films of MgxZn1-xO (x = 0.16) were prepared by RF magnetron sputtering at a substrate temperature of 80 ℃. The effects of annealing temperature on the films were investigated by X-ray diffraction (XRD), photoluminescence (PL) MgxZn1-xO films. The measurement results show that the MgxZn1-xO films are single phase hexagonal wurtzite structure and have the preferred orientation along the c-axis. With the increase of annealing temperature, the (002) XRD peak The intensity, the average grain size and the UV PL peak intensity increase, and the FWHM of the (002) XRD peak decrease. The results show that high quality MgxZn1-xO can be obtained by controlling the annealing temperature by RF magnetron sputtering film.