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采用线锥形结构 ,在 silicon- on- insulator(SOI)材料上设计并实现了一种新的紧缩型 3- d B多模干涉耦合器(MMI) .与普通的矩形结构 3- d B MMI耦合器相比 ,该器件长度减少了 4 0 % .耦合器输出均衡度为 1.3d B,过剩损耗为 2 .5 d B.
A new tapered 3- d B multi-mode interference coupler (MMI) was designed and implemented on a silicon-on-insulator (SOI) material by using a wire taper structure.Compared with the conventional rectangular structure 3- d B MMI Compared with the coupler, the device length is reduced by 40%. The coupler output balance is 1.3d B and the excess loss is 2.5 dB.