论文部分内容阅读
讨论了CZSi中氧的四类行为:(1)由石英坩埚中直拉法生长晶体时氧的行为;(2)间隙氧的本征行为,例如扩散等;(3)亚稳结构,有O-V_(si),热施主与新施主,(4)热力学稳定结构,有各种氧沉淀及其诱生缺陷。
The four types of behavior of oxygen in CZSi are discussed: (1) the behavior of oxygen during crystal growth by Czochralski method in the quartz crucible; (2) the intrinsic behavior of interstitial oxygen such as diffusion; (3) the metastable structure with O -V_ (si), the thermal donor and the new donor, (4) a thermodynamically stable structure with various oxygen depositions and their induced defects.