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利用KrF准分子激光退火超薄非晶硅膜,并结合热退火技术制备了单层纳米硅薄膜并研究了薄膜的场电子发射性质.在晶化形成的纳米硅薄膜中可以观测到稳定的场电子发射现象,其开启电场从原始淀积的非晶硅薄膜的17V/μm降低到8·5V/μm,而场发射电流密度可以达到0·1mA/cm2.激光晶化后形成的纳米硅材料的场电子发射特性的改善可以从薄膜表面形貌的改变以及高密度纳米硅的形成所导致的内部电场增强作用来解释.
Single-layer nanostructured silicon thin films were fabricated by KrF excimer laser anneal of ultra-thin amorphous silicon films combined with thermal annealing techniques and the field emission properties of the films were investigated. A stable field can be observed in the nanosilica films formed by crystallization The electron emission phenomenon, which turns on the electric field decreases from 17 V / μm to 8 · 5 V / μm and the field emission current density can reach 0.1 mA / cm 2 from the original deposited amorphous silicon thin film.After the nanocrystalline silicon material The improvement of the field electron emission properties can be explained by the change of the surface morphology of the film and the enhancement of the internal electric field caused by the formation of high-density nanosilver.