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在绝缘体上硅衬底上,制备了栅长为0.5μm的低势垒体接触结构和源体紧密接触结构的横向双扩散功率晶体管.详细研究了器件的背栅特性.背栅偏置电压对横向双扩散功率晶体管的前栅亚阈值特性、导通电阻和关态击穿特性均有明显影响.相比于源体紧密接触结构,低势垒体接触结构横向双扩散功率晶体管的背栅效应更小,这是因为低势垒体接触结构更好地抑制了浮体效应和背栅沟道开启.还介绍了一种绝缘体上硅横向双扩散功率晶体管的电路模型,其包含前栅沟道,背栅沟道和背栅偏置决定的串联电阻.
On the silicon-on-insulator substrate, a lateral double-diffused power transistor with a low gate contact length of 0.5μm and a close contact structure of the source is fabricated. The back gate characteristics of the device are investigated in detail. The back gate bias voltage pair The characteristics of front-gate sub-threshold, on-resistance and off-state breakdown of double-diffused power transistor are significantly affected by the gate-back effect of the lateral double-diffused power transistor with low-body-contact structure Because the low-body-contact structure better restrain the floating body effect and the back gate channel opening.A circuit model of a silicon-on-insulator (SOI) double-diffused power transistor is also described, which includes a front gate trench, Back-gate channel and back-gate bias determine the series resistance.