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用热壁外延法在氟金云母衬底上生长出了高质量 C6 0 薄膜 ,用原子力显微镜观察了样品的表面形貌 .测量并分析了不同厚度 C6 0 薄膜的紫外 -可见吸收光谱 .由测量的透射及反射光谱 ,经计算得到了吸收系数与入射光子能量的关系 .利用结晶半导体的带间跃迁理论 ,对禁戒的带间直接跃迁 hu→ t1 u和电偶极允许的带间直接跃迁 hu→ t1 g的带隙分别进行了计算
High-quality C6 0 thin films were grown on a fluorophlogopite substrate by thermal wall epitaxy, and the surface morphology of the samples was observed by atomic force microscopy. The UV-Vis absorption spectra of C6 0 thin films with different thicknesses were measured and analyzed. The relationship between the absorption coefficient and the energy of incident photon was calculated.Based on the interband transition theory of crystalline semiconductors, the direct transition between forbidden band transitions hu → t1 u and the allowed dipole band transition The band gap of hu → t1 g is calculated separately