论文部分内容阅读
The energy band diagram and charge distribution of the unintentional doped AlGaN/GaN/AlGaN/GaN doubleheterostructure were obtained by self-consistent Poisson-Schrodinger calculations. The severe band tilting andhigh two-dimensional electron gas (2DEG) density mainly attribute to the large inteal polarization intensity,which is close to a linear function of Al composition. The influence of Al composition is investigated. The resultsshow that band tilting enlarges and 2DEG gains with Al composition, and two-dimensional hole gas occurs whenAl composition reaches a certain extent. The influence of Al composition and two-dimensional hole gas (2DHG)on devices is discussed.