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采用Tokuda改变的线性组合算符法和改进的Lee-Low-Pines变换法,研究了温度对量子阱中电子(空穴)与界面光学(IO)声子强耦合又与体纵光学(LO)声子弱耦合激子的有效质量的影响。结果表明,由电子(空穴)-体纵光学声子弱耦合所产生的激子有效质量(M_(ex-LO)~*)随量子阱宽N的增加而增大、随电子与空穴间相对距离ρ的增加而先增大后缓慢减小再趋于稳定,温度T对M_(ex-LO)~*及其随N和ρ变化的规律产生显著影响,同时,M_(ex-LO)~*随T的变化也强烈的受到量子尺寸效应的影响;由电子(空穴)-界面光学声子强耦合所产生的激子有效质量M_(ex-LO)~*随N的增加而减小、随T的升高而增大、随ρ的增加而先增大后缓慢减小再趋于稳定,但T对M_(ex-LO)~*随N和ρ变化的规律无明显影响。
The effects of temperature on the coupling between electron (hole) and interface optical (IO) phonon in quantum well and the longitudinal optical (LO) are studied by using the linear combination operator of Tokuda change and the improved Lee-Low-Pines transform method. Effect of phonon weakly coupled exciton effective mass. The results show that the effective mass of excitons (M_ (ex-LO) ~ *) due to the phonon weak coupling of electron (hole-body) increases with the increase of quantum well width N, The relative distance ρ increases firstly and then decreases slowly and then stabilizes. The temperature T has a significant effect on the exponential change of M ex-LO and its changes with N and ρ. Meanwhile, ) ~ * Is also strongly influenced by the quantum size effect with the change of T. The effective mass of excitons M_ (ex-LO) ~ * produced by strong coupling of electron (hole) -interface optical phonon increases with N Decreases with the increase of T, then decreases first and then decreases slowly with the increase of ρ, and then tends to be stable. However, the effect of T on the changes of M_ (ex-LO) ~ * with the changes of N and ρ has no significant effect .