论文部分内容阅读
采用Sol-gel法在Pt/Ti/SiO2/Si衬底上制备Bi3.4Ce0.6Ti3O12薄膜.利用X射线衍射仪和原子力显微镜对其微观结构进行了观察,发现制备的薄膜具有单一的钙钛矿晶格结构,而且表面平整致密.对Bi3.4Ce0.6Ti3O12薄膜的介电、铁电、疲劳和漏电流等性能进行了研究,结果表明:室温下,在测试频率1 kHz时,其介电常数为172,介电损耗为0.031;在测试电压为600 kV·cm-1,其剩余极化值2Pr达到了67.1μC·cm-2,具有较大的剩余极化值,矫顽场强2Ec也达到了299.7kV·cm-1;经过4.46×109次极化反转后,没有发生疲劳现象,表现出良好的抗疲劳特性;漏电流测试显示制备的Bi3.4Ce0.6Ti3O12薄膜具有良好的绝缘性能.
The Bi3.4Ce0.6Ti3O12 thin films were prepared on Pt / Ti / SiO2 / Si substrates by Sol-gel method.The microstructures of Bi3.4Ce0.6Ti3O12 films were observed by X-ray diffractometer and atomic force microscopy and the results show that the prepared films have single perovskite Lattice structure, and the surface is even and compact.The dielectric, ferroelectric, fatigue and leakage currents of Bi3.4Ce0.6Ti3O12 thin films were studied.The results show that at room temperature, the dielectric constant Was 172 and the dielectric loss was 0.031. At the test voltage of 600 kV · cm-1, the remanent polarization 2Pr reached 67.1μC · cm-2, with a larger remanent polarization. The coercive field strength 2Ec was also Reaching 299.7kV · cm-1. After 4.46 × 109 cycles of polarization reversal, no fatigue occurred and showed good anti-fatigue properties. The leakage current test showed that the prepared Bi3.4Ce0.6Ti3O12 thin film had good insulation properties .