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由于线路杂散电感存储能量的释放,绝缘门极双极性晶体管(insulated gate bipolar transistor,IGBT)在开通和关断的瞬态过程中,其两端将产生电压尖峰。为了对该电压尖峰进行定量研究,需要对IGBT开关过程进行分析,抽取线路的杂散电感参数。传统抽取方法通常利用IGBT关断电压的最大幅值以及近似的电流斜率作为计算参数,其计算结果并不精确。为得到更精确的结果,提出一种新的参数抽取方法,通过将IGBT开通、关断的非线性过程分解为多个线性阶段,并充分考虑反并联二极管前向恢复和反向恢复的影响,在此基础上得到电压过冲ΔUce和相对应的di/dt,进而得到准确的杂散参数抽取过程。最后,将该分析方法在一台75 kVA的单相逆变器进行实验验证,利用不同工况下的开通和关断过程进行线路杂散电感抽取,均得到一致的结果,从而证明了本方法的有效性与正确性。
Insulated gate bipolar transistors (IGBTs) generate voltage spikes at both ends during turn-on and turn-off transient due to the release of stray inductance storage energy. In order to quantitatively study this voltage spike, the IGBT switching process needs to be analyzed to extract the stray inductance parameters of the line. The traditional extraction method usually takes the maximum amplitude of IGBT turn-off voltage and the approximate current slope as calculation parameters, and the calculation result is not accurate. In order to obtain more accurate results, a new parameter extraction method is proposed. By decomposing the non-linear process of IGBT turn-on and turn-off into multiple linear phases and fully considering the forward recovery and reverse recovery of anti-parallel diode, On this basis, the voltage overshoot ΔUce and the corresponding di / dt are obtained, and the exact process of extracting stray parameters is obtained. Finally, this method is verified experimentally in a single-phase inverter of 75 kVA, and the stray inductances of the lines are extracted by the turn-on and turn-off processes under different conditions, and the results are consistent. This proves the method The validity and correctness.