提出了一个同时表示CVD过程的气体流动、温度分布和物质传输的三维数学模型。应用这个模型预报了在含有SiCl_4的氢气流中沉积出Si的锥台式反应器中的速度场、温度场和浓度场。所得的结果有助于增进对这类反应器中的传输过程的认识,模型亦可用于设计参数的最优化,诸如入口流量,锥台倾角等。 A three-dimensional mathematical model of gas flow, temperature distribution and material transport, which simultaneously represents the CVD process, is presented. This model is used to predict the velocity field, temperature field and concentration field in a cone-bench reactor in which Si is deposited in a SiCl 4 -containing hydrogen stream. The results obtained help to increase awareness of the transport process in such reactors and the model can also be used to optimize design parameters such as inlet flow, cone angle, and the like.