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本实验采用SD大鼠，通过光化学方法选择性造成大脑皮质局灶脑卒中，应用免疫组化ABC法观察了脑卒中后各时间点c－fos基因表达及含量变化。结果发现：光化学局灶性脑卒中能有效地诱导皮质、齿状回、海马及室旁核等神经细胞的c－fos基因表达，并且具有时间依赖性。30min开始表达，3～6h达高峰，持续24～48h后消退，图像分析显示病灶皮质fos免疫阳性标记显著增多（P<0．o1）。从基因调控水平为光化学局灶性脑卒中模型的可行性提供了理论依据。
In this experiment, SD rats were used to selectively induce cerebral cortex stroke by photochemical methods. The expression of c-fos gene and its content at different time points after stroke were observed by immunohistochemical ABC method. The results showed that focal cerebral apoplexy can effectively induce the c-fos gene expression in cortex, dentate gyrus, hippocampus and paraventricular nucleus and in a time-dependent manner. The expression began to peak at 30min and reached a peak at 3 ~ 6h, and continued to disappear after 24 ~ 48h. Image analysis showed that fos immunopositive markers increased markedly in the cortex (P <0. 01). This study provides a theoretical basis for the feasibility of photochemical focal stroke model from the gene regulation level.