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本文用三维边缘元方法分析了电导率为张量的有间隙Ⅱ-Ⅵ族半导体材料的散射特性;给出了散射参数与半导体特性参数之间的关系曲线并说明了用这些曲线确定Ⅱ-Ⅵ族半导体电特性参数的方法。该方法直接从泛函变分出发,避开了其它方法中求解有损超薄各向异性介质填充波导本征值问题的困难,简化了求解过程。计算结果与实验值的比较证实了本方法具有有效、可靠和精确的特点。
In this paper, the scattering characteristics of gapped II-VI semiconductor materials with electrical conductivity as tensor are analyzed by the three-dimensional edge-element method. The relationship between the scattering parameters and the semiconducting parameters is given. Family of semiconductor electrical parameters of the method. The method starts directly from the functional variational approach and avoids the difficulties of solving the eigenvalue problem of the waveguide filled with ultra-thin anisotropic media in other methods, and simplifies the solving process. Comparing the calculated results with the experimental ones, it proves that the method is effective, reliable and accurate.