氮化镓是制造蓝光或紫外光器件以及大功率器件最有发展前途的半导体材料之一．浅杂质（包括Ｐ型和ｎ型的）离子注入ＧａＮ是研究 ＧａＮ的主要课题之一．本文研究注碳（Ｃ） ＧａＮ经不同温度退火后的Ｒａｍａｎ和 Ｈａｌｌ效应，发现两个重要的实验事实：在适当的温度范围内， Gallium nitride is one of the most promising semiconductor materials for making blue or ultraviolet devices and high-power devices. The shallow impurities (including P-type and n-type) ion implantation of GaN GaN is one of the major topics of research. In this paper, Raman and Hall effects of carbon-annealed (C) GaN annealed at different temperatures are investigated. Two important experimental facts are found: at the proper temperature range,