论文部分内容阅读
通过改变发光层的厚度,制备了一种双量子阱结构的有机电致发光器件(OLEDs),其结构为ITO/2T-NATA(20nm)/NPBX(50nm)/[Alq3:2%C545(dnm)/Alq3(3nm)]2/Alq3(17nm)/LiF(0.9nm)/Al。在常温下研究了器件的发光层在不同厚度(d=10,15,20和25nm)时的磁电阻(MR,magnetoresistance)特性。实验结果表明,在10V驱动电压的作用下,在相同磁场强度下,器件的厚度越大,电阻率也越大;在驱动电压为10V时,随着磁场强度的增加,10nm厚器件的MR随着磁场的增加而增大,表现正MR特性;而15、20和25nm厚3种器件的MR随着磁场强度的增强先减小后增加并趋于饱和状态,发光层越厚,MR减小的幅度越大,且都表现出负MR特性;获得最大的MR为-10.32%。
By changing the thickness of the light-emitting layer, a double quantum well structure organic electroluminescent device (OLEDs) was prepared. The structure of the device is ITO / 2T-NATA (20nm) / NPBX (50nm) / [Alq3: 2% C545 ) / Alq3 (3 nm)] 2 / Alq3 (17 nm) / LiF (0.9 nm) / Al. The magnetoresistance (MR) characteristics of the light-emitting layer of the device at different thicknesses (d = 10, 15, 20 and 25 nm) were investigated at room temperature. The experimental results show that under the same magnetic field intensity, the greater the thickness of the device under the action of the driving voltage of 10V, the larger the resistivity. With the increase of the magnetic field, the MR of the 10nm thick device The magnetic field increases and exhibits positive MR characteristics. The MR of three kinds of devices with 15, 20 and 25nm thickness first decreases and then increases and becomes saturated with the increase of magnetic field intensity. The thicker the emitting layer, the smaller the MR The larger the magnitude, and both showed negative MR characteristics; the maximum MR was -10.32%.